Responsivity photodetector

Details Responsivity photodetector Responsivity photodetector

1998-03-20

2000-03-28

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 53, 257462, 438 48, 438 57, H01L 31075, H01L 31105, H01L 31117

Patent

active

060435496

ABSTRACT:
A photodetector having improved responsivity includes first, second and third contact layers and first and second absorption layers. The first and second absorption layers are disposed on opposite sides of the first contact layer. The second contact layer is disposed on the first absorption layer and the third contact layer is disposed on the second absorption layer. The first contact layer has a first polarity. The second and third contact layers have a second polarity which is opposite the first polarity. Preferably, the first and second absorption layers are each made of a material having approximately equivalent electrical characteristics and the second and third contact layers are interconnected. Alternatively, one absorption layer is responsive to a first wavelength and another absorption layer is responsive to a second wavelength.

REFERENCES:
patent: 4616247 (1986-10-01), Chang et al.
patent: 4716449 (1987-12-01), Miller
patent: 5045908 (1991-09-01), Lebby
patent: 5311047 (1994-05-01), Chang
patent: 5329136 (1994-07-01), Goossen
patent: 5872016 (1999-02-01), Cunningham et al.

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