Resonant-tunnelling hot electron transistor

Details Resonant-tunnelling hot electron transistor Resonant-tunnelling hot electron transistor

1995-12-05

1998-06-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 26, 257 29, H01L 2906

Patent

active

057738424

ABSTRACT:
A resonant-tunnelling hot transistor includes buffer layers undoped with impurities on either side of a collector or an emitter potential barrier having a quantum well structure. When a voltage is applied to the transistor, most of the potential drop occurs at the first buffer layer and the second buffer layer due to their thickness. This enables the inclination of the energy band of the collector barrier layer or the emitter barrier layer to be diminished, whereby the energy of the confined energy state E.sub.QW of the quantum well and the energy change of the confined state is diminished. In addition, the NDR region of I-V characteristics curve can be moved by controlling the biasing voltage, and the wave form of the curve maintains its original form.

REFERENCES:
patent: 5278427 (1994-01-01), Choi
patent: 5389798 (1995-02-01), Ochi et al.
Chen, et al.: "Experimental Realization of a New Transistor"; pp. 267-272; IEEE Transactions on Electron Devices, vol. 40, No. 2, Feb. 1993.
Seo, et al.: "Pseudomorphic InGaAs Base Ballistic Hot-Electron Device"; pp. 1946-1948, Appl. Phys. Lett. 53(20), 14 Nov. 1988.
Imamura, et al.: "In GaAs/In(AlGa)As RHET's with InAs Pseudomorphic Base"; pp. 479-483, IEEE Transactions On Electron Devices, vol. 39, No. 3, Mar. 1992.

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