Resonant tunneling transistor with barrier layers

Details Resonant tunneling transistor with barrier layers Resonant tunneling transistor with barrier layers

1992-04-20

1994-01-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 29, 257197, 257592, H01L 2988

Patent

active

052801829

ABSTRACT:
According to this invention, a resonant tunneling transistor includes a first semiconductor layer having an n-type conductivity and serving as a collector layer, a second semiconductor layer having a p-type conductivity and serving as a base layer, a third semiconductor layer having the n-type conductivity and serving as an emitter layer, a fourth semiconductor layer serving as a first barrier layer against either of electrons and holes in the first and second semiconductor layers, and a fifth semiconductor layer serving as a second barrier layer against either of electrons and holes in the second and third semiconductor layers. The first, second, third, fourth, and fifth semiconductor layers are sequentially stacked in an order of the first, fourth, second, fifth, and third semiconductor layers. The second semiconductor layer sandwiches at least one sixth semiconductor layer serving as a third barrier against either of electrons and holes, thereby dividing the second semiconductor layer into a plurality of semiconductor layer portions.

REFERENCES:
patent: 4849799 (1989-07-01), Capasso et al.
patent: 4958201 (1990-09-01), Mimura
patent: 4959696 (1990-09-01), Frensley et al.
patent: 5017973 (1991-05-01), Mizuta et al.
patent: 5049955 (1991-09-01), Freeouf et al.
patent: 5059545 (1991-10-01), Frensley et al.
Reed et al., "Realization of a Three-Terminal Resonant Tunneling Device: The Bipolar Quantum Resonant Tunneling Transistor," Appl. Phys. Lett, 54(11), 13 Mar. 1989, pp. 1034-1036.
Capasso (Ed.), Physics of Quantum Electron Devices, 1990, pp. 202-211, Springer-Verlag, New York.

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