Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Negative resistance type
Patent
1994-12-27
1996-08-06
Larkins, William D.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
Negative resistance type
257 15, 257 17, 257 23, 257 26, 257 29, H01L 29737, H01L 2915
Patent
active
055437494
ABSTRACT:
A heterojunction semiconductor device includes an unipolar transistor having, a collector layer, a base layer, a collector side barrier layer provided between the collector layer and base layer, an emitter layer, and an emitter side barrier layer provided between the base layer and the emitter layer. The emitter side barrier layer has a thickness for tunneling a carrier from the emitter and base layer and injecting the carrier into the base layer according to a predetermined voltage applied between the emitter and base layers, the base layer includes a superlattice structure. The superlattice structure includes a plurality thin barrier layers and a thin well layer for forming a mini-band through which the injected carrier can move and a mini-band gap with which the injected carrier collides.
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patent: 4620206 (1986-10-01), Ohta et al.
patent: 4712121 (1987-12-01), Yokoyama
"Resonant Tunneling Transistor with Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device", Federico Capasso et al., J. Appl. Phys. 58(3), Aug. 1, 1985, pp. 1366-1368.
"New Negative-Resistance Device By A Chirp Superlattice", Electronics Letters, Sep. 29, 1983, vol. 19, No. 20, 822-823.
I.B.M. Tech. Discl. Bulletin vol. 29, No. 7, Dec. 1986.
Chen et al. "Enhanced Ballistic Transport in IAGaAs/InAlAs Hot Electron Transistor." Aug. 24, 1987, 1254-1255 of Appl. Physics. 357434.
Fujitsu Limited
Larkins William D.
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