Resonant-tunneling heterojunction bipolar transistor device

Details Resonant-tunneling heterojunction bipolar transistor device Resonant-tunneling heterojunction bipolar transistor device

1991-02-22

1992-09-29

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307478, 357 4, 357 16, 357 34, H01L 2972, H01L 29161, H01L 29105

Patent

active

051516187

ABSTRACT:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer. The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

REFERENCES:
patent: 5027179 (1991-06-01), Yokoyama et al.
Yokoyama et al., "A New Functional Resonant Tunneling Hot Electron Transistor (RHET)", Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, pp. L853-L854.

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