Resonant-tunneling heterojunction bipolar transistor device

Details Resonant-tunneling heterojunction bipolar transistor device Resonant-tunneling heterojunction bipolar transistor device

1993-11-08

1995-02-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257 15, 257 25, H01L 2973, H01L 27082

Patent

active

053898044

ABSTRACT:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face between the base layer and the collector layer; and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough, formed at least in the emitter layer and operatively facing to the base layer.
The RHBT has a differential negative resistance characteristics for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

REFERENCES:
patent: 4956681 (1990-09-01), Yokoyama et al.
patent: 5027179 (1991-06-01), Yokoyama et al.
patent: 5151618 (1992-09-01), Yokoyama et al.
Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, "A New Functional Resonant-Tunneling Hot Electron Transistor (RHET)," Yokoyama et al., Tokyo, Japan, pp. L853-L854.
Journal of Applied Physics, vol. 58, No. 3, Aug. 1, 1985, American Institute of Physics, New York, U.S., "Resonant Tunneling Transistor with Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device", F. Capasso et al., pp. 1366-1368.
Patent Abstracts of Japan, vol. 7, No. 22 (E-201) [1367], Oct. 4, 1983; and JP-A-58 114 455 (Nippon Denki K.K.), 7-7-83.
International Electron Devices Meeting, Dec. 1981, "Ga, Al/As/GaAs Bipolar Transistors for Digital Integrated Circuits," Asbeck et al., pp. C29-C32.

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