Resonant-tunneling functional device using multiple negative dif

Details Resonant-tunneling functional device using multiple negative dif Resonant-tunneling functional device using multiple negative dif

1988-06-22

1990-03-06

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 4, 357 16, 307279, 307304, H01L 2980

Patent

active

049070452

ABSTRACT:
There is described a functional device constructed with a semi-insulating substrate, a channel layer of a conductive compound semiconductor formed on the semi-insulating substrate, a channel electrode coupled to a first area of the channel layer, a gate electrode coupled to a second area of the channel layer, first and second resonant tunneling diodes formed on third and fourth areas of the channel layer intervening the second area, a source electrode formed on the first resonant tunneling diode, and a drain electrode formed on the second resonant tunneling diode. The functional device may be applied to many function circuits such as a bistable multi-vibrator or memory cell, and a frequency multiplier with addition of a few circuit elements or wirings.

REFERENCES:
patent: 4721983 (1988-01-01), Frazier
patent: 4806998 (1989-02-01), Vinter et al.
Applied Physics Letters, vol. 51(7), pp. 526-531 by Capasso et al, Aug. 1987.

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