Resonant tunneling electronic device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 2906, H01L 2915, H01L 2988

Patent

active

057708665

ABSTRACT:
The present invention provides a resonant tunneling electronic device having a plurality of nearly decoupled quantum barrier layers and quantum-well layers alternatively formed between an emitter layer and a collector layer, and has a stacked structure in such a manner that in the order of their stack the heights of the quantum barriers are gradually increased, and the widths of the quantum-wells interposed between the quantum barrier layers are gradually decreased, so that electron resonant tunneling through the aligned quantum with confined states under the application of external bias can occur.

REFERENCES:
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4878104 (1989-10-01), Reed et al.
patent: 4914488 (1990-04-01), Yamane et al.
Resonant tunneling through a HgTe/Hg.sub.1-X Cd.sub.x Te double barrier, single quantum well heterostructure; M.A. Reed, R.J. Koestner, and M.W. Goodwin; accepted for publication 10 Sep. 1986; pp. 1293-1295.
Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes; E.R. Brown, J.R. Soderstrom, C.D. Parker, L.J. Mahoney, K.M. Molvar and T.C. McGill; 8 Oct. 1990; accepted for publication 18 Mar. 1991; pp. 2291-2293.
Fabrication of High-Performance Al.sub.x Ga.sub.1-X As/In.sub.y Ga.sub.1-y As Resonant Tunneling Diodes Using a Microwave-Compatible Technology; D. Lippens, E. Barbier, and P. Mounaix; Mar. 1991; pp. 114-116.
AlGaAs/Ga-As double barrier diodes with high peak-to-valley current ratio; C.I. Huang, M.J. Paulus, C.A. Bozada, S.C. Dudley, K.R. Evans, C.E. Stutz, R.L. Jones and M.E. Cheney; 1987; accepted for publication 13 May 1987; pp. 121-123.
The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2 X 10.sup.5 A cm.sup.-2 ; E. Wolak, E. Ozbay, B.G. Park, S.K. Diamond, David M. Bloom and James S. Harris, Jr.; accepted for publication 26 Nov. 1990; pp. 3345-3350.
Quantum well oscillators; T.C.L.G. Sollner, P.E. Tannenwald, D.D. Peck, and W.D. Goodhue; accepted for publication 25 Sep. 1984; pp. 1319-1321.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Resonant tunneling electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resonant tunneling electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant tunneling electronic device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1396525

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.