Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-10-09
1998-10-20
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257 20, 257 24, 257 28, 257105, 257192, 257472, H01L 2906, H01L 310328, H01L 31072, H01L 31109
Patent
active
058250492
ABSTRACT:
A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.
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Drummond Timothy J.
Sherwin Marc E.
Simmons Jerry A.
Weckwerth Mark V.
Sandia Corporation
Tang Alice W.
Whitehead Jr. Carl W.
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