Patent
1987-11-05
1989-08-01
Larkins, William D.
357 16, H01L 2988
Patent
active
048537535
ABSTRACT:
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.
REFERENCES:
patent: 3193804 (1965-07-01), Perry et al.
patent: 4410902 (1983-10-01), Malik
patent: 4667211 (1987-05-01), Iafrate et al.
Capasso et al., J. Appl. Phys., vol. 58, pp. 1366-1368, Aug. 1, 1985.
Sugiyama et al., Appl. Phys. Letters, vol. 52, No. 4, Jan. 25, 1988, pp. 314-316.
Capasso Federico
Cho Alfred Y.
Sen Susanta
American Telephone and Telegraph Company AT&T Bell Laboratories
Businger Peter A.
Larkins William D.
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