Resonant-tunneling bipolar transistor

Details Resonant-tunneling bipolar transistor Resonant-tunneling bipolar transistor

1988-08-30

1990-05-15

Wojciechowicz, Edward J.

357 4, 357 12, 357 16, 357 61, H01L 2972

Patent

active

049262327

ABSTRACT:
There is disclosed a resonant-tunneling bipolar transistor with a quantum-well comprising an inversion forming layer of an n-type gallium arsenide which is in contact with a first potential barrier layer of an undoped aluminum gallium arsenide partially defining the quantum-well, so that a two-dimensional hole gas layer serving as a base region takes place at the interface between the inversion forming layer and the first potential barrier layer due to differences in electron affinity and in the sum of electron affinity and energy bandgap upon application of an appropriate biasing voltage, thereby producing hot electrons injected from an emitter region through the quantum-well into the base region by the agency of a resonant-tunneling phenomenon.

REFERENCES:
patent: 4853753 (1989-08-01), Capasso et al.

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