Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1994-01-10
1995-07-11
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257 14, 257 15, 257 17, 257183, H01L 4902
Patent
active
054323622
ABSTRACT:
The invention is a resonant tunnel effect quantum well transistor. To improve the gain by avoiding the storage of charges in the well, which consists of layer (14) with a narrow forbidden band and two barriers (13, 15) with a wide forbidden band, the quantum well is laterally bounded--in the plane of the layers--by a depleted region (22) which forms a quantum box whose dimensions are smaller than the De Broglie wavelength. Application to fast electronics (200 GHz).
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Reed, et al., Physical Review Letters, vol. 60, No. 6, 1988, pp. 535-537. "Observation of Discrete Electronic States in a Zero-Dimensional Semiconductor Nanostructure".
Groshev, et al., Physical Review Letters, vol. 66, No. 8, 1991, pp. 1082-1085. "Charging Effects of a Single Quantum Level in a Box".
Lippens Didier
Vinter Borge
"Thomson-CSF"
Jackson Jerome
Tang Alice W.
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