Optical waveguides – With optical coupler – Particular coupling structure
Reexamination Certificate
2006-04-18
2006-04-18
Lee, John D. (Department: 2874)
Optical waveguides
With optical coupler
Particular coupling structure
C385S028000, C385S039000, C385S049000
Reexamination Certificate
active
07031577
ABSTRACT:
A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (<3 dB) insertion losses. Incorporation of an active layer (electro-optic, electro-absorptive, non-linear-optical) into such waveguides enables active control of optical loss and/or modal index with relatively low-voltage/low-intensity control signals. Integrated optical devices incorporating such waveguides may therefore exhibit relatively low drive signal requirements.
REFERENCES:
patent: 4142775 (1979-03-01), Ramaswamy et al.
patent: 5446579 (1995-08-01), Lomashevitch
patent: 5475704 (1995-12-01), Lomashevitch
patent: 5515461 (1996-05-01), Deri et al.
patent: 5703989 (1997-12-01), Khan et al.
patent: 5926496 (1999-07-01), Ho et al.
patent: 6009115 (1999-12-01), Ho
patent: 6031945 (2000-02-01), You et al.
patent: 6052495 (2000-04-01), Little et al.
patent: 6222964 (2001-04-01), Sadot et al.
patent: 6282219 (2001-08-01), Butler et al.
patent: 6310995 (2001-10-01), Saini et al.
patent: 6330378 (2001-12-01), Forrest et al.
patent: 6339607 (2002-01-01), Jiang et al.
patent: 6356694 (2002-03-01), Weber
patent: 6400856 (2002-06-01), Chin
patent: 6424669 (2002-07-01), Jiang et al.
patent: 6445724 (2002-09-01), Abeles
patent: 6507684 (2003-01-01), Tapalian et al.
patent: 6560259 (2003-05-01), Hwang
patent: 6633696 (2003-10-01), Vahala et al.
patent: 6839491 (2005-01-01), Painter et al.
patent: 6865317 (2005-03-01), Vahala et al.
patent: 2002/0081055 (2002-06-01), Painter et al.
patent: 2003/0081902 (2003-05-01), Blauvelt et al.
F. Agahi, B. Pezeshki, J. A. Kash, and D. W. Kisker, “Asymmetric F abry-Perot modulator with a waveguide geometry”, Electron. Lett. vol. 32(3) 210 (1996).
Carl Arft, Diego R. Yankelovich, Andre Knoesen, Erji Mao, and James S. Harris Jr., “In-line fiber evanescent field electrooptic modulators”, Journal of Nonlinear Optical Physics and Materials vol. 9(1) 79 (2000).
C. I. H. Ashby, M. M. Bridges, A. A. Allemnan, B. E. Hammons, “Origin of the time dependence of wet oxidation of AlGaAs”, Appl. Phys. Lett. vol. 75(1) 73 (1999).
W. G. Bi and C. W. Tu, “Bowing parameter of the band-gap energy of GaNxAs1-x”, Appl. Phys. Lett. vol. 70(12) 1608 (1997).
P. Chavarkar, L. Zhao, S. Keller, A. Fisher, C. Zheng, J. S. Speck, and U. K. Mishra, “Strain relaxation of InxGa1-xAs during lateral oxidation of underlying AlAs layers”, Appl. Phys. Lett. vol. 75(15) 2253 (1999).
E. I. Chen, N. Holonyak, Jr., andM. J. Ries, “Planar disorder- and native-oxide-defined photopumped AlAs-GaAs superlattice minidisk lasers”, J. Appl. Phys. vol. 79(11) 8204 (1996).
K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, B. E. Hammons, D. Mathes, and R. Hull, “Advances in selective wet oxidation of AlGaAs alloys”, IEEE Journal of Selected Topics in Quantum Electronics vol. 3(3) 916 (1997).
R. H. Homg, D. S. Wuu, S.C. Wei, M. F. Huang, K.H. Chang, P.H. Liu, and K. C. Lin, “AlGaInP/AuBe/glass light emitting diodes fabricated by wafer-bonding technology”, Appl. Phys. Letts. vol. 75(2) 154 (1999).
D.L. Huffaker, H. Deng, Q. Deng, and D.G. Deppe, “Ring and stripe oxide-confined vertical-cavity surface-emitting lasers”, Appl. Phys. Lett., vol. 69(23), 3477 (1996).
B. Koley, F. G. Johnson, O. King, S. S. Saini, and M. Dagenais, “A method of highly efficient hydrolization oxidation of III-V semiconductor lattice matched to indium phosphide”, Appl. Phys. Lett. vol. 75(9) 1264 (1999).
M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: A novel material for long-wavelength semiconductor lasers”, IEEE Journal of Selected Topics in Quantium Electronics, vol. 3(3), 719 (1997).
B.A. Little, S.T. Chu, H. A. Haus, J. Foresi, and J.-P. Laine, “Microring channel dropping filters”, J. Lightwave Technology vol. 15 998 (1997).
Y. Luo, D. C. Hall, L. Kou, L. Steingart, J. H. Jackson, O. Blum, and H. Hou, “Oxidized AlxGa1-xAs heterostructures planar waveguides”, Appl. Phys. Lett. vol. 75(20) 3078 (1999).
M. H. MacDougalP. D. Dapkus, A. E. Bond, C.-K. Lin, and J. Geske, “Design and fabrication of VCSEL's with AlxOy-GaAs DBR's”, IEEE Journal of Selected Topics in Quantum Electronics vol. 3(3) 905 (1997).
M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy-AlGaAs-GaAs distributed Bragg reflectors”, IEEE Photonics Tech. Lett: vol. 9(7) 884 (1997).
R. L. Naone and L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs”, J. Appl. Phys. vol. 82(5) 2277 (1997).
N. Ohnoki, F. Koyama, and K. Iga, “Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure”, Appl. Phys. Lett. vol. 73(22) 3262 (1998).
N. Ohnold, F. Koyama, and K. Iga, “Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers”, J. Crystal Growth vol. 195 603 (1998).
R. D. Pechstedt, P. St. J. Russell, T. A. Birks, and F. D. Lloyd-Lucas, “Selective coupling of fiber modes with use of surface-guided Bloch modes supported by dielctric multilayer stacks”, J. Opt. Soc. Am. A vol. 12(12) 2655 (1995).
R. D. Pechstedt, P. St. J. Russell, “Narrow-band in-line fiber filter using surface-guided Bloch modes supported by dielectric multilayer stacks”, J. Lightwave Tech. vol. 14(6) 1541 (1996).
B. Pezeshki, J. A. Kash, D. W. Kisker, and F. Tong, “Multiple wavelength light source using an asymmetric waveguide coupler”, Appl. Phys. Lett. vol. 65(2) 138 (1994).
B. Pezeshki, J. A. Kash, D. W. Walker, and F. Tong, “Wavelength sensitive tapered coupler with anti-resonant waveguides”, IEEE Phot. Tech. Lett. vol. 6(10) 1225 (1994).
B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides”, J. Lightwave Tech. vol. 12(10) 1791 (1994).
B. Pezeshki, J. A. Kash, and F. Agahi, “Waveguide version of an asymmetric Fabry-Perot modulator”, Appl. Phys. Lett. vol. 67(12) 1662 (1995).
H. Saito, T. Makimoto, and N. Kobayashi, “MOVPE growth of strained InGaAsN/GaAs quantum wells”, J. Crystal Growth, vol. 195 416 (1998).
I.-H. Tan, C. Reaves, A. L. Holmes Jr., E. L. Hu, J. E. Bowers, and S. DenBaars, “Low-temperature bonding of III-V semiconductors”, Electronics Letters 31 588 (1995).
H. Wada and T. Kamijoh, “Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding”, Japanese Journal of Applied Physics Part 1 33 4878 (1994).
H. Wada, T. Kamijoh, and Y. Ogawa, “Direct bonding of InP to different materials for optical devices”, Proceedings of the 3rd International Symposium on Semiconductor Wafer Bonding Science, Technology, and Applications, 95-97 579, The Electrochemical Society (Pennington NJ, 1995).
H. Wada and T. Kamijoh, “Room-temperature cw operation of InGaAsP lasers on Si fabricated by wafer bonding”, IEEE Photonics Technology Letters 8 173 (1996).
H. Wada and T. Kamijoh, “Wafer bonding of InP to Si and its application to optical devices”, Japanese Journal of Applied Physics Part 1 37 1383 (1998).
Z. J. Wang, S.-J. Chua, F. Zhou, W. Wang, and R. H. Wu, “Buried heterostructures InGaAsP/InP strain-compensated multiple quan
Painter Oskar J.
Vahala Kerry J.
Vernooy David W.
Alavi David S.
Christie Parker & Hale LLP
Lee John D.
Miller Scott R.
Xponent Photonics Inc
LandOfFree
Resonant optical devices incorporating multi-layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resonant optical devices incorporating multi-layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant optical devices incorporating multi-layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3555670