Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-01-28
1994-03-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257436, 25037014, H01L 2714, H01L 3100
Patent
active
052910555
ABSTRACT:
A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which layer reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.
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Fowles, G., Introduction to Modern Optics, Holt, Rinehart, 1975, pp. 96-99.
Farhoomand Jam
McMurray, Jr. Robert E.
Brekke Darrell G.
Crane Sara W.
Manning John R.
Miller Guy
The United States of America as represented by the Administrator
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