Resonant gate drive circuits

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing two electrode solid-state device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S587000

Reexamination Certificate

active

07598792

ABSTRACT:
A resonate gate drive circuit for driving at least one power switching device recovers energy loss for charging and discharging the gate capacitance of the power switching devices. The gate drive circuit uses a current source to charge and discharge the gate capacitance with a high current, reducing the switching loss of the power switching device. The gate drive circuit comprises four semiconductor bidirectional conducting switching devices connected in a full-bridge configuration. An inductor connected across the bridge configuration provides the current source. The gate drive circuit may be used in single and dual high-side and low-side, symmetrical or complementary, power converter gate drive applications.

REFERENCES:
patent: 4677346 (1987-06-01), Roberts et al.
patent: 5010261 (1991-04-01), Steigerwald
patent: 5140201 (1992-08-01), Uenishi
patent: 5179512 (1993-01-01), Fisher et al.
patent: 5264736 (1993-11-01), Jacobson
patent: 5434522 (1995-07-01), Fikart et al.
patent: 6169683 (2001-01-01), Farrington
patent: 6275092 (2001-08-01), Maggio et al.
patent: 6344768 (2002-02-01), Daun-Lindberg et al.
patent: 6441673 (2002-08-01), Zhang
patent: 6650169 (2003-11-01), Faye et al.
patent: 6813110 (2004-11-01), Leighton et al.
patent: 7061279 (2006-06-01), Leete
patent: 7106536 (2006-09-01), Fang et al.
Alou, P., et al., “A new driving scheme for synchonous rectifiers: single winding self-driven synchronous rectification.”IEEE Transactions on Power Electronics, 16: 803-811 (2001).
Chen, Y., et al., “A resonant MOSFET gate driver with complete energy recovery.”IEEE Power Electronics and Motion Control Conference, Proceedings, The Third International, 1: 402-406 (2000).
Chen, Y., et el., “A resonant MOSFET gate driver with efficient energy recovery.”IEEE Transactions on Power Electronics, 19: 470-477 (2004).
Christoph, K.J., et al., “High frequency power MOSFET gate drive considerations.”HFPC Proceedings, May pp. 173-180 (1988).
Cobos, J.A., et al., “New driving scheme for self driven synchronous rectifiers.”IEEEpp. 840-846 (1999).
de Vries, I.D., “A resonant power MOSFET/IGBT gate driver.”IEEEpp. 197-185 (2002).
Diaz, J., et al., “A new family of loss-less power MOSFET drivers.”IEEEpp. 43-48 (1994).
Diaz, J., et al., “A new lossless power MOSFET driver based on simple DC/DC converters.”IEEE, pp. 37-43 (1995).
Jacobson, B.S., et al., “High frequency resonant gate driver with partial energy recovery.”HFPC Proceedings, May, pp. 133-141 (1993).
Leedham, R.J., et al., “Design of a high speed power MOSFET driver and its use in a half-bridge converter.”The European Power Electronics Association, pp. 407-412 (1993).
López, T., et al., “A detailed analysis of a resonant gate driver for PWM applications”IEEEpp. 873-878 (2003).
Maksimovic, D., “A MOS gate drive with resonant transitions.”IEEEpp. 527-532 (1991).
Panov, Y., et al., “Design considerations for 12-V/1.5-V, 50-A voltage regulator modules.”IEEE Transactions on Power Electronics16: 776-783 (2001); correction to “Design considerations for 12-V/1.5-V, 50-A voltage regulator modules.”IEEE Transactions on Power Electronics17: 152 (2002).
Strydom, J.T., “A comparison of fundamental gale-driver topologies for high frequency applications,”IEEEpp. 1045-1052 (2004).
Weinberg, S.H., “A novel lossless resonant MOSFET driver.”IEEEpp. 1003-1010 (1992).
Wiegman, H.L.N., “A resonant pulse gate drive for high frequency applications,”IEEEpp. 738-743 (1992).
Yao, K., et al., “A novel resonant gate driver for high frequency synchronous buck converter”IEEEpp. 280-286 (2001).
Yao, K., et al., “A novel resonant gate driver for high frequency synchronous buck converters.”IEEE Transactions on Power Electronics17: 180-186 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Resonant gate drive circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resonant gate drive circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant gate drive circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4067694

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.