Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-08-27
1994-09-13
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 25, H01L 2988
Patent
active
053471407
ABSTRACT:
A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.
REFERENCES:
patent: 4912531 (1990-03-01), Reed et al.
Hirai Yoshihiko
Morimoto Kiyoshi
Niwa Masaaki
Okada Kenji
Terui Yasuaki
Limanek Robert
Matsushita Electric - Industrial Co., Ltd.
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