Resonant-cavity optical device

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 46, H01S 319

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active

056779240

ABSTRACT:
A resonant-cavity optical device, eg a vertical cavity surface emitting laser, has a substrate upon which are provided a Bragg reflector multilayer bottom mirror, a semiconductor lower spacer region, an active region, and a dielectric region which surrounds the bottom mirror, the active region and the lower spacer region. An upper spacer region and a top mirror are provided on top of the active region. The top mirror has a window in which a metal terminal is provided. The terminal is in direct contact with the upper spacer region which is formed of a transparent electrically conducting oxide, eg indium tin oxide.

REFERENCES:
patent: 5115441 (1992-05-01), Ropf et al.
patent: 5245622 (1993-09-01), Jewell
patent: 5266503 (1993-11-01), Wang et al.
patent: 5295147 (1994-03-01), Jewell et al.
Search Report for UK Appl. 9422950.7, mailed Mar. 6, 1995.
Jewell et al, IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, "Veritcal-Cavity Surface-Emitting Lasers: Deisgn, . . . ".
Matin et al, Electronics Letters, Feb. 1994, vol. 30, No. 4, pp. 318-320, "Optically Transparent Indium-Tin-Oxide (ITO) Ohmic Contacts . . . ".
Cava et al, Appl. Phys. Lett. 64 (16) Apr. 1994, pp. 2071-2072, "GaInO.sub.3 : A New Transparent Conducting Oxide ".
Gerard et al, Solid-State Electronics, vol. 37, No. 4-6, pp. 1341-1344, 1994, "Photonic Bandgap of Two-Dimensional Dielectric Crystals".
Lee et al, J. Vac. Sci. Technol. A 11(5), Sep./Oct. 1993, pp. 2742-2746, "Electronic and Optical Properties of Room Temperature Sputter".
Scherer et al. Electronics Letters, 18 Jun. 1992, vol. 28, No. 13, pp. 1224-1226, "Fabrication of Low Threshold Voltage Microlasers".
Hasnain et al, Appl. Phys. Lett. 63(10), Sep. 1993, pp. 1307-1309, "Low, Threshold Buried Heterostructure Vertical Cavity Surface . . . ".
Iga et al, IEEE Journal of Quantum Electronics, vol. 24, No. 9, Sep. 1988, "Surface Emitting Semiconductor Lasers".
Search Report for European Appl. 95308104.9, mailed Feb. 28, 1996.
Ishikawa et al, J. Appl. Phys. 66(5), Sep. 1, 1989, "New Double-Heterostructure Indium-Tim Oxide/InGaAsP/AIGaAs Surface Light-Emitting Diodes . . . ".
Dowling et al, J. Appl. Phys. 75(4), 15 Feb. 1994, "The Photonic Band Edge Laser: A New Approach to Gain Enhancement," pp. 1896-1899.
Schubert et al, Appl. Phys Lett. 60(8), 24 Feb. 1992, "Resonant Cavity Light-Emitting Diode," pp. 921-923.

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