Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-03-27
2007-03-27
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE31033, C438S047000
Reexamination Certificate
active
11060191
ABSTRACT:
Multi-quantum well (MQW) spatial light modulator devices are disclosed that are capable of achieving reasonable quantum efficiencies and high contrast ratios in order to close an optical communication link by resolving the logical on or off state. The device both modulates and detects light through the use of the quantum well design and resonant cavity enhancement. Based on the materials (e.g., InGaAs/InAlAs) and their band structures, this device can be configured to communicate in the eye-safe wavelength range (e.g., 1550±20 nm). The device can be fabricated using standard photolithographic processes such as molecular beam epitaxy (MBE) and inductively coupled plasma (ICP) reactive ion etching (RIE).
REFERENCES:
patent: 5105301 (1992-04-01), Campi
patent: 5229878 (1993-07-01), Tomita et al.
patent: 5298762 (1994-03-01), Ou
patent: 5521742 (1996-05-01), Ishimura
patent: 5543629 (1996-08-01), Nakamura et al.
patent: 5621564 (1997-04-01), Kageyama et al.
patent: 5854090 (1998-12-01), Iwai et al.
patent: 6028323 (2000-02-01), Liu
patent: 6580736 (2003-06-01), Yoshie et al.
patent: 6956232 (2005-10-01), Reynolds
patent: 6989550 (2006-01-01), Nakahara et al.
patent: 2004/0070810 (2004-04-01), Yu et al.
patent: 2004/0213313 (2004-10-01), Akulova et al.
Stievater, T.H.; Rabinovich, W.S.; Goetz, P.G.; Mahon, R.; Binari, S.C., “A surface-normal coupled-quantum-well modulator at 1.55 /spl mu/m,” Photonics Technology Letters, IEEE, vol. 16, Issue 9, Sep. 2004 pp. 2036-2038.
Kiziloglu, Kursad et al., “InP-Based High Sensitivity pin / HEMT / HBT Monolithic Integrated Optoelectronic Receiver”, pp. 1-4. No Date Cited.
Emsley, Matthew et al., “High-Efficiency, 10 GHz Bandwidth Resonant-Cavity-Enhanced Silicon Photodetectors Operating at 850 nm Wavelength”, pp. 1-2.No Date Cited.
Tyson, Robert K. et al., “Microelectromechanical system programmable aberration generator for adaptive optics”, Applied Optics, May 1, 2001, pp. 2063-2067, vol. 40 No. 13, Optical Society of America.
Alavi Kambiz
Koch F. Elliott
Maloney Patrick G
Pellegrino Joseph
BAE Systems Information and Electronic Systems Integration Inc.
Kraig William
Lee Eugene
Maine & Asmus
LandOfFree
Resonant cavity enhanced multi-quantum well light modulator... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resonant cavity enhanced multi-quantum well light modulator..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant cavity enhanced multi-quantum well light modulator... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3736520