Resonant cavity device array for WDM application and the...

Details Resonant cavity device array for WDM application and the... Resonant cavity device array for WDM application and the...

2006-01-31

2006-01-31

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050120, C372S050121, C372S050124

Reexamination Certificate

active

06993055

ABSTRACT:
The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.

REFERENCES:
patent: 5719891 (1998-02-01), Jewell
patent: 5985686 (1999-11-01), Jayaraman
patent: 6117699 (2000-09-01), Lemoff et al.
patent: 6174749 (2001-01-01), Yuen et al.
patent: 6795457 (2004-09-01), Song et al.
patent: 2001/0050934 (2001-12-01), Choquette et al.

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