Resistor structure for transistor having polysilicon base contac

Details Resistor structure for transistor having polysilicon base contac Resistor structure for transistor having polysilicon base contac

1983-12-29

1986-06-17

Edlow, Martin H.

357 20, 357 40, 357 48, 357 50, 357 85, H01L 2702, H01L 2906, H01L 2704

Patent

active

045959447

ABSTRACT:
Disclosed is a dumbbell-shaped resistor structure fabricated in a semiconductor substrate for determining the resistivity of the intrinsic base of a polysilicon base transistor. The structure includes an n-doped base region having two large parts separated by a narrow part, resembling a flattened dumbbell, each of which extends into the substrate. A p-type emitter region extends a distance into a portion of the narrow and the second large parts of the base region. An n-type reach-through region extends from the emitter region through the base region electrically isolating a portion of the narrow and second large parts of the base region from the remainder of the base region and forming an electrically continuous p-type path between the first large part of the base region and the portion of the second large part within the reach-through region.

REFERENCES:
patent: 3335340 (1967-08-01), Barson et al.
patent: 3404321 (1968-10-01), Kurosawa et al.
patent: 3465213 (1969-09-01), Hugle
patent: 4463369 (1984-07-01), Harford
T. H. Baker et al., "Dumbbell-Type Resistance Testing Structure" IBM Technical Disclosure Bulletin, vol. 14, No. 12, May '72, p. 3707.
I. Magdo et al., "Dumbbell Resistor Test Structure", IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sep. 1972, pp. 1330-1331.

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