Resistor structure and method for manufacturing the same

Details Resistor structure and method for manufacturing the same Resistor structure and method for manufacturing the same

2006-09-12

2006-09-12

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S384000, C257S380000

Reexamination Certificate

active

07105912

ABSTRACT:
A resistor structure includes a substrate, a semiconductor layer positioned on the substrate, a salicide block positioned on portions of the surface of the semiconductor layer, and at least a salicide layer positioned on the portions of the surface of the semiconductor layer adjacent to the salicide block. The semiconductor layer has a predetermined region overlapping the salicide layer, the junction between the salicide layer and the salicide block, and the portions of the salicide block adjacent to the junction between the salicide layer and the salicide block. The semiconductor layer has a higher doping concentration within the predetermined region than in the other regions.

REFERENCES:
patent: 5607866 (1997-03-01), Sato et al.
patent: 2002/0140097 (2002-10-01), Kamino et al.
patent: 2005/0074929 (2005-04-01), Hasegawa et al.

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