Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-05-30
2010-10-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S758000, C257S773000, C257S776000, C257SE31029
Reexamination Certificate
active
07820997
ABSTRACT:
A memory device has a sidewall insulating member with a sidewall insulating member length according to a first spacer layer thickness. A first electrode formed from a second spacer layer having a first electrode length according to a thickness of a second spacer layer and a second electrode formed from the second spacer layer having a second electrode length according to the thickness of the second spacer layer are formed on sidewalls of the sidewall insulating member. A bridge of memory material having a bridge width extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall insulating member, wherein the bridge comprises memory material.
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Ho Chia Hua
Hsieh Kuang Yeu
Lai Erh Kun
Haynes Beffell & Wolfeld LLP
Macronix International Co. Ltd.
Warren Matthew E
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