Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2010-04-28
2011-12-20
Such, Matthew W (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257S004000, C257SE21610, C257SE45002, C257SE21003
Reexamination Certificate
active
08080440
ABSTRACT:
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
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Ho Chia-Hua
Hsieh Kuang Yeu
Lai Erh-Kun
Harrison Monica D
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Such Matthew W
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