Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-05-30
2010-06-08
Andújar, Leonardo (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S555000, C257SE21610
Reexamination Certificate
active
07732800
ABSTRACT:
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
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Lai
Ho Chia Hua
Hsieh Kuang Yeu
Lai Erh Kun
Andújar Leonardo
Harrison Monica D
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
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