Resistor personalized memory device using a resistive gate fet

Details Resistor personalized memory device using a resistive gate fet Resistor personalized memory device using a resistive gate fet

1983-09-08

1986-04-15

Popek, Joseph A.

Static information storage and retrieval

Read only systems

Semiconductive

365100, G11C 1700

Patent

active

045832013

ABSTRACT:
A resistor personalized memory cell consisting of a resistive gate field effect transistor. One end of the gate electrode is connected to the memory cell access line, the other end to one of its source or drain regions. The source or drain region not connected to the gate electrode is connected to the memory cell bit line. Memory cell personalization is accomplished by selecting the resistance of the resistive gate. Memory cell data is read by detecting the current flow through the cell, the magnitude of the current flow being proportional to the gate resistance.

REFERENCES:
patent: 4092735 (1978-05-01), McElroy
patent: 4158239 (1979-06-01), Bertin
H. O. Askin, "Single Device Push-Pull Read-Only Storage Cell", IBM Tech. Disc. Bull., vol. 16, No. 5, Oct. 1973, p. 1642.

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