Resistor of semiconductor device and method for fabricating...

Details Resistor of semiconductor device and method for fabricating... Resistor of semiconductor device and method for fabricating...

2006-12-15

2008-10-21

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257S536000, C257S537000, C257S380000, C257SE21004, C257SE27047, C438S384000, C438S385000

Reexamination Certificate

active

07439147

ABSTRACT:
A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer; and a contact electrically connected to the first polysilicon layer and the second polysilicon layer. The portions of the first polysilicon layer that do not have the insulating layer formed thereupon have a higher impurity ion concentration than that of the regions on which the insulating layer is formed.

REFERENCES:
patent: 2006/0049912 (2006-03-01), Grudin et al.

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