Resistor material, resistor made therefrom and method of making

Details Resistor material, resistor made therefrom and method of making Resistor material, resistor made therefrom and method of making

1975-03-21

1977-12-27

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

29620, 106 47R, 252518, 427102, 427123, 427126, H01C 1012

Patent

active

040657434

ABSTRACT:
A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of a mixture of tin oxide (SnO.sub.2) and tantalum oxide (Ta.sub.2 O.sub.5). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. The oxide mixture may be heat treated prior to mixing with the glass frit. Upon cooling, the substrate has on the surface thereof a film of the glass having the particles of the oxides embedded therein and dispersed therethroughout. The resistor material provides a resistor having a high resistivity and a low temperature coefficient of resistance.

REFERENCES:
patent: 2564706 (1951-08-01), Mochel
patent: 2564707 (1951-08-01), Mochel
patent: 2564708 (1951-08-01), Mochel
patent: 2564709 (1951-08-01), Mochel
patent: 3019137 (1962-01-01), Hanlet et al.
patent: 3914514 (1975-10-01), MacKenzie
patent: 3915721 (1975-10-01), Kamigaito et al.
J. Dearden, High Value High Voltage Resistors, "Electronic Components," Mar. 1967, pp. 259-262.
D. B. Binns, Conducting Glazes, "Trans. Brit. Ceram. Soc.," Jan. 1974, 73, pp. 7-17.
D. G. Powell, Semiconducting Glazes for High Voltage Insulators, "Am. Ceram. Soc. Bull.," 52(8) 1973, pp. 600-603.
M. K. Basu and R. V. Lele, Effect of Reducing Atmosphere of SnO.sub.2 -Sb.sub.2 O.sub.5 -Based Semiconducting Glaze, "Am. Ceram. Soc. Bull.," 53(6), 1974, pp. 488-489.
Burkett, R. H. W., Tin Oxide Resistors, "Jour. Brit. I.R.E.," Apr. 1961, pp. 301-304.
R. W. Gress, J. A. Murphy, and A. T. Talwalkar, Characteristics of Antimony-Doped Tin (IV) Oxide Films "Proceedings of 1968 Electronic Components Conference."

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