Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-03-27
2007-03-27
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21004
Reexamination Certificate
active
11071908
ABSTRACT:
A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.
REFERENCES:
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 6664166 (2003-12-01), Jaiswal et al.
Barber H. Jerome
Jaiswal Rajneesh
Kuehl Thomas E.
Brady III W. James
Chaudhari Chandra
Garner Jacqueline J.
Movva Amar
Telecky , Jr. Frederick J.
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