Resistor integration structure and technique for noise...

Details Resistor integration structure and technique for noise... Resistor integration structure and technique for noise...

2008-06-10

2008-06-10

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE51003

Reexamination Certificate

active

07384855

ABSTRACT:
A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.

REFERENCES:
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 5468672 (1995-11-01), Rosvold
patent: 6365482 (2002-04-01), Maghsoudnia
patent: 2005/0122207 (2005-06-01), Vialpando et al.
patent: 2006/0040458 (2006-02-01), Phan et al.
patent: 2006/0166505 (2006-07-01), Gasner et al.

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