Resistor film and method for forming the same

Details Resistor film and method for forming the same Resistor film and method for forming the same

1990-07-05

1992-06-16

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

338309, 338308, 338314, 219216, 252512, 346 76PH, H01C 1012

Patent

active

051227770

ABSTRACT:
A resistor film formed by applying onto a substrate a homogeneous mixture solution of metal organic compounds including metals selected from the element group of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), barium (Ba), and the like, and a metal selected from the group of iridium (Ir) and ruthenium (Ru) and burning the homogeneous mixture solution. The homogeneous mixture solution is burned at a temperature of 700.degree. C. or more in an atmosphere of oxygen.

REFERENCES:
patent: Re30313 (1980-06-01), Carcia
patent: 3655440 (1972-11-01), Brady
patent: 4362656 (1982-12-01), Hormadaly

Affiliated with

Also associated with

Rating

Resistor film and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistor film and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistor film and method for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1756609