Resistor design system

Coating processes – Electrical product produced – Condenser or capacitor

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29574, 29593, 427 96, 427101, 427102, 427103, 427 8, H01L 2166

Patent

active

045605831

ABSTRACT:
Disclosed is a method of forming a precision integrated resistor element on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body in combination with a test resistor structure by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring the resistance(s) and width(s) of the test structure the variation .DELTA..rho..sub.s in sheet resistance and variation .DELTA.W in width due to process and image tolerances, respectively, are determined. Next, using .DELTA..rho..sub.s and .DELTA.W the adjustment in length .DELTA.L necessary to match the resistance of the resistance element with the nominal design value is calculated. Finally, this information (.DELTA.L) is supplied to an E-beam generating system to expose an E-beam sensitive contact level layer formed on the resistor body to form metal contact openings for the resistor body at a separation which provides a resistor having a resistance value corresponding to the design value.

REFERENCES:
patent: 3879236 (1975-04-01), Langdon
patent: 4088799 (1978-05-01), Kurtin
patent: 4184062 (1980-01-01), Schmidt
patent: 4196228 (1980-04-01), Priel
patent: 4338351 (1982-07-01), Bloom
patent: 4347479 (1982-08-01), Cullet
patent: 4467312 (1984-08-01), Komatsu
C. G. Jambotkar, "Resistors with Submicron Width" IBM Technical Disclosure Bulletin, vol. 24, No. 12, May 1982, pp. 6434-6436.
D. Basire, "Resistance and Dimension Characterization Via Kerf Automatic In-Line Tests" IBM Technical Disclosure Bulletin, vol. 23, No. 5, Oct. 1980, pp. 1963-1968.

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