Resistivity changing memory cell having nanowire electrode

Details Resistivity changing memory cell having nanowire electrode Resistivity changing memory cell having nanowire electrode

2008-09-02

2008-09-02

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

11182022

ABSTRACT:
A memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode.

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