Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-04-21
1998-04-14
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257379, 257537, 257538, 257577, 257904, 365154, H01L 2976, H01L 2900
Patent
active
057395772
ABSTRACT:
A resistive structure formed on an integrated circuit substrate is disclosed. The structure includes a plurality of resistive elements serially connected. Each resistive element comprises a forward biased semiconductor junction and a reverse biased semiconductor junction. The resistive value of each resistive element can be varied with a preferred range being from about 500 megohms to about 5 gigaohms. In fabrication, the multiple resistive elements are electrically and physically simultaneously formed and are connected in series to obtain higher resistive values. The disclosed resistive structure allows very high resistances to be obtained using very little planar surface area.
REFERENCES:
patent: 5111068 (1992-05-01), Kusakabe
patent: 5296726 (1994-03-01), MacElwee
patent: 5382807 (1995-01-01), Tsutsumi et al.
Martin Wallace Valencia
Micro)n Technology, Inc.
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