Resistive semiconductor element based on a solid-state ion...

Details Resistive semiconductor element based on a solid-state ion... Resistive semiconductor element based on a solid-state ion...

2008-01-15

2008-01-15

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45004, C348S148000

Reexamination Certificate

active

07319235

ABSTRACT:
A nonvolatile, resistively switching memory cell has a layer of a porous dielectric between a first electrode. The dielectric is not a chalcogenide.

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patent: 0 687 004 (2002-12-01), None
patent: WO 03/079463 (2003-09-01), None
Qingyuan Han, et al., “Ultra Low-k Porous Silicon Dioxide Films from a Plasma Process,” IEEE, pp. 171-173.
Thieu Jacobs, et al., “Voiding in Ultra Porous Low-k Materials Proposed Mechanism, Detection and Possible Solutions,” IEEE, pp. 236-238.

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