Resistive Schottky barrier gate microwave switch

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Details

357 22, H01L 2964, H01L 2980

Patent

active

042452309

ABSTRACT:
A Schottky barrier resistive gate switch which may be utilized for microwave switching. First and second metallizations which serve as signal inputs overlie a semiconductive substrate, making contact with a doped region thereof. A gate of high resistivity material which forms a Schottky barrier with the substrate is positioned between the metallizations. The doped region defines a channel, the conductivity of which is adjusted by the regulation of the Schottky depletion region formed therein.

REFERENCES:
patent: 3700976 (1972-10-01), Dill
patent: 3898353 (1975-08-01), Napoli et al.

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