Patent
1979-09-28
1981-01-13
Munson, Gene M.
357 22, H01L 2964, H01L 2980
Patent
active
042452309
ABSTRACT:
A Schottky barrier resistive gate switch which may be utilized for microwave switching. First and second metallizations which serve as signal inputs overlie a semiconductive substrate, making contact with a doped region thereof. A gate of high resistivity material which forms a Schottky barrier with the substrate is positioned between the metallizations. The doped region defines a channel, the conductivity of which is adjusted by the regulation of the Schottky depletion region formed therein.
REFERENCES:
patent: 3700976 (1972-10-01), Dill
patent: 3898353 (1975-08-01), Napoli et al.
Kwok Siang-Ping
Ladd, Jr. Glenn O.
Hughes Aircraft Company
Kramsky Elliot N.
MacAllister W. H.
Munson Gene M.
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