Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-09-13
2010-02-23
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S002000, C257S225000
Reexamination Certificate
active
07667293
ABSTRACT:
A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has an opening. A portion of the memory cell is exposed from the opening and has a second width smaller than the first width. The top electrode is disposed on the insulating layer and is coupled with the memory cell.
REFERENCES:
patent: 6783999 (2004-08-01), Lee
patent: 7504653 (2009-03-01), Lung
patent: 2006/0215445 (2006-09-01), Baek et al.
Ho Chia-Hua
Hsieh Kuang-Yeu
Lai Erh-Kun
Lee Ming-Daou
Bacon & Thomas PLLC
Macronix International Co. Ltd.
Menz Douglas M
LandOfFree
Resistive random access memory and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistive random access memory and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive random access memory and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4154969