Resistive memory element

Details Resistive memory element Resistive memory element

2006-04-04

2006-04-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000

Reexamination Certificate

active

07023008

ABSTRACT:
An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals. The volume of heating material is embedded in the volume of resistive memory material.

REFERENCES:
patent: 6114713 (2000-09-01), Zahorik
patent: 2004/0165422 (2004-08-01), Hideki et al.

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