Resistive memory device and method of fabricating the same

Details Resistive memory device and method of fabricating the same Resistive memory device and method of fabricating the same

2011-03-22

2011-03-22

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S295000, C257S296000, C257SE27084, C257SE27104, C257SE21662, C438S003000, C438S238000

Reexamination Certificate

active

07911030

ABSTRACT:
A resistive memory device includes: a substrate, an insulation layer arranged over the substrate, a first electrode plug penetrating the insulation layer from the substrate, having a portion protruded out of an upper portion of the insulation layer, and having peaks at edges of the protruded portion, a resistive layer disposed over the insulation layer and covering the first electrode plug, and a second electrode arranged over the resistive layer.

REFERENCES:
patent: 5858831 (1999-01-01), Sung
patent: 6303433 (2001-10-01), Kuo
patent: 6627969 (2003-09-01), Jain et al.
patent: 2001/0029105 (2001-10-01), Seta et al.
patent: 10-0824761 (2007-01-01), None
patent: 100755141 (2007-08-01), None
patent: 1020080035212 (2008-04-01), None
Multi-layer Cross-point Binary Oxide Resistive Memory(OxRRAM)for Post-NAND Storage Application; I. G. Baek et al.
Korean Office Action for Korean application No. 10-2008-0072477.
Korean Notice of Allowance for application No. 10-2008-0072477.

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