Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-06-06
2006-06-06
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S295000, C257S421000
Reexamination Certificate
active
07057258
ABSTRACT:
A resistive cross point array memory device comprising a plurality of word lines extending in a row direction, a plurality of bit lines extending in a column direction such that a plurality of cross points is formed at intersections between the word and bit lines, and at least one memory element formed in at least one of the cross points. The memory element comprises a first tunnel junction having a bottom conductor, a top conductor, a barrier layer adjacent the bottom conductor, and wherein the bottom conductor comprises a non-uniform upper surface.
REFERENCES:
patent: 5299151 (1994-03-01), Ishihara et al.
patent: 5311039 (1994-05-01), Kimura et al.
patent: 5965913 (1999-10-01), Yuan et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6020777 (2000-02-01), Bracchitta et al.
patent: 6154410 (2000-11-01), Cutter et al.
patent: 6285055 (2001-09-01), Gosain et al.
patent: 6541792 (2003-04-01), Tran et al.
patent: 6816431 (2004-11-01), Lu et al.
patent: 6841846 (2005-01-01), Chen et al.
patent: 6870751 (2005-03-01), Van Brocklin et al.
patent: 6870755 (2005-03-01), Rinerson et al.
patent: 2003/0003632 (2003-01-01), Cleeves et al.
patent: 2003/0132468 (2003-07-01), Raberg
patent: 2003/0179601 (2003-09-01), Seyyedy et al.
patent: 2003/0218920 (2003-11-01), Harari
patent: 2003/0228710 (2003-12-01), Drewes
patent: 2004/0169254 (2004-09-01), Porter
patent: 2004/0174740 (2004-09-01), Lee et al.
patent: 2005/0073023 (2005-04-01), Fifield et al.
Jackson Warren B.
Nickel Janice
Tran Lung T.
Van Brocklin Andrew L.
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