Resistive memory cell fabrication methods and devices

Details Resistive memory cell fabrication methods and devices Resistive memory cell fabrication methods and devices

2007-04-17

2010-06-29

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S095000, C438S128000, C438S238000, C438S257000, C257SE21008, C257SE21664, C257SE27004, C257SE27016, C257SE21104, C257SE31029, C257SE45002

Reexamination Certificate

active

07745231

ABSTRACT:
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.

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