Resistive memory and methods of processing resistive memory

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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C257S536000, C365S148000

Reexamination Certificate

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08048755

ABSTRACT:
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.

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