Radiant energy – Ionic separation or analysis
Reexamination Certificate
2009-12-22
2011-12-27
Souw, Bernard E (Department: 2881)
Radiant energy
Ionic separation or analysis
C250S282000, C250S287000
Reexamination Certificate
active
08084732
ABSTRACT:
A reflectron lens for a time-of-flight mass spectrometer and a method of making same are disclosed. The reflectron lens includes a glass tube having a conductive surface along the length of the tube. The conductive surface has an electrical resistance gradient along its length. The electrical resistance gradient provides an electric field interior to the tube that varies in strength along the length of the tube when an electric potential is applied to opposing ends of the tube. A mass spectrometer incorporating the reflectron lens, a method of making the reflectron lens, and an apparatus for removing lead from the surface of a lead silicate glass tube are also disclosed.
REFERENCES:
patent: 2680826 (1954-06-01), O'Neill et al.
patent: 2841729 (1958-07-01), Wiley
patent: 2841879 (1958-07-01), Wiley
patent: 3197663 (1965-07-01), Norman et al.
patent: 3424909 (1969-01-01), Rougeot
patent: 3488509 (1970-01-01), Goodrich
patent: 3519870 (1970-07-01), Jensen
patent: 3634712 (1972-01-01), Orthuber
patent: 3673449 (1972-06-01), Eschard
patent: 3675063 (1972-07-01), Spindt et al.
patent: 3819941 (1974-06-01), Carrico
patent: 3885180 (1975-05-01), Carts, Jr.
patent: 3902089 (1975-08-01), Beasley et al.
patent: 3911167 (1975-10-01), Linder
patent: 3959038 (1976-05-01), Gutierrez et al.
patent: 3976905 (1976-08-01), Seidman et al.
patent: 3996474 (1976-12-01), Lowther
patent: 4015159 (1977-03-01), Zipfel, Jr.
patent: 4051403 (1977-09-01), Feingold et al.
patent: 4073989 (1978-02-01), Wainer
patent: 4093562 (1978-06-01), Kishimoto
patent: 4095136 (1978-06-01), Niklas
patent: 4099079 (1978-07-01), Knapp
patent: 4126781 (1978-11-01), Siegel
patent: 4217489 (1980-08-01), Rosier
patent: 4236073 (1980-11-01), Martin
patent: 4267442 (1981-05-01), Rosier
patent: 4352985 (1982-10-01), Martin
patent: 4390784 (1983-06-01), Browning et al.
patent: 4454422 (1984-06-01), Persyk
patent: 4468420 (1984-08-01), Kawahara et al.
patent: RE31847 (1985-03-01), Luckey
patent: 4558144 (1985-12-01), Fay et al.
patent: 4563250 (1986-01-01), Becker et al.
patent: 4577133 (1986-03-01), Wilson
patent: 4589952 (1986-05-01), Behringer et al.
patent: 4598037 (1986-07-01), Felten
patent: 4624736 (1986-11-01), Gee et al.
patent: 4624739 (1986-11-01), Nixon et al.
patent: 4659429 (1987-04-01), Isaacson et al.
patent: 4693781 (1987-09-01), Leung et al.
patent: 4698129 (1987-10-01), Puretz et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4714861 (1987-12-01), Tosswill
patent: 4725332 (1988-02-01), Spohr
patent: 4731559 (1988-03-01), Eschard
patent: 4734158 (1988-03-01), Gillis
patent: 4740267 (1988-04-01), Knauer et al.
patent: 4764245 (1988-08-01), Grewal
patent: 4780395 (1988-10-01), Saito et al.
patent: 4786361 (1988-11-01), Sekine et al.
patent: 4790903 (1988-12-01), Sugano et al.
patent: 4794296 (1988-12-01), Warde et al.
patent: 4800263 (1989-01-01), Dillon et al.
patent: 4802951 (1989-02-01), Clark et al.
patent: 4806827 (1989-02-01), Eschard
patent: 4825118 (1989-04-01), Kyushima
patent: 5086248 (1992-02-01), Horton et al.
patent: 5109157 (1992-04-01), Loen
patent: 5162649 (1992-11-01), Burke
patent: 5205902 (1993-04-01), Horton et al.
patent: 5351332 (1994-09-01), Cook
patent: 5378960 (1995-01-01), Tasker et al.
patent: 5726076 (1998-03-01), Tasker et al.
patent: 5834771 (1998-11-01), Yoon et al.
patent: 6008491 (1999-12-01), Smentkowski et al.
patent: 6369383 (2002-04-01), Cornish et al.
patent: 6607414 (2003-08-01), Cornish et al.
patent: 6717135 (2004-04-01), Hansen
patent: 6825474 (2004-11-01), Young
patent: 7141787 (2006-11-01), Laprade
patent: 7154086 (2006-12-01), Laprade
patent: 2003/0230726 (2003-12-01), Van der Veer et al.
patent: 2004/0183028 (2004-09-01), Laprade
patent: 2005/0109930 (2005-05-01), Hill et al.
patent: 2008/0073516 (2008-03-01), Laprade
patent: 2008/0173809 (2008-07-01), Wu
patent: 1121858 (1982-04-01), None
patent: 0704879 (1996-04-01), None
patent: 2180986 (1987-04-01), None
patent: 62119121 (1987-05-01), None
J.P. Boutot, “Degassing of microchannel plates,” ACTA Electronica, vol. 14, No. 2, 1971, pp. 245-262.
N.R. Rajopadhye et al., “Characterization of Al2O3Films Deposited by Various Methods,” Thin Solid Films, 142 (1986) 127-138.
A.M. Then et al., “Formation and Behavior of Surface Layers on Electron Emission Glasses,” Jour. of Non-Crystalline Solids 120 (1990) 178-187.
N.R. Whetten et al., “Secondary Electron Emission from MgO Thin Films,” Journal of Applied Physics, vol. 30, No. 3, (Mar. 1959), pp. 432-435.
E. Gatti et al., “Study of the Electric Field Inside Microchannel Plate Multipliers,” © 1983 IEEE. pp. 1-8.
L.P. Andersson et al., “The Parallel-Plate Electron Multiplier,” © 1979 The Institute of Physics, 1015-1022.
L.H. Van Vlack, Elements of Materials Science & Engineering, Addison-Wesley, Reading, MA, 1980, p. xii.
M. Lampton, “The Microchannel Image Intensifier,” Sci. Am. Nov. 1981, vol. 245, No. 5 pp. 62-71.
A.M. Tyutikov et al., “Study of the Surface Layer Composition and the Secondary Electron Emission Coefficient at Lead Silicate Glasses,” Sov.J.Opt.Technol. (Apr. 1980), pp. 201-203.
Ju.M. Simeonova et al., “Surface Compositional Studies of Heat Reduced Lead Silicate Glass,” Jour. of Non-Crystalline Solids, 57 (1983), 177-187.
N.R. Whetton, Methods of Experimental Physics, Academic Press, New York 1964, pp. 69-85.
R.U. Martinelli et al., “The Application of Semiconductors with Negative Electron Affinity Surfaces to Electron Emission Devices,” Proceedings of the IEEE, vol. 62, No. 10, (Oct. 1974), pp. 1339-1360.
D. Washington et al., “Technology of Channel Plate Manufacture,” ACTA Electronica vol. 14, No. 2, 1971, pp. 201-224.
H.J.L. Trap, “Electronic Conductivity in Oxide Glasses,” ACTA Electronica, vol. 14, No. 1, 1971, pp. 41-77.
G.E. Hill, “Secondary Electron Emission and Compositional Studies on Channel Plate Glass Surfaces,” Advances in Electronics and Electron Physics, vol. 40A Ed. 2, Academic Press 1976, pp. 153-165.
W. Kern et al., “Chemical Vapor Deposition of Inorganic Thin Films,” Thin Film Processes, © 1978 Academic Press, Inc. pp. 257-331.
P.D. Dapkus “Metalorganic Chemical Vapor Deposition,” Ann. Rev. Mater. Sci., 1982 12:243-69.
A.C. Adams, “Dielectric and Polysilicon Film Deposition,” VLSI Technology, McGraw-Hill, New York 1983, pp. 93-129.
M.L. Green et al., “Chemical Vapor Deposition of Metals for Integrated Circuit Applications,” Jour. of Metals, Jun. 1985, pp. 63-71.
S. Wolf et al., “Silicon Epitaxial Film Growth,” Silicon Processing for the VLSI Era, pp. 124-159.
A. R. Coulson et al., “Chemical Vapor Deposition of Amorphous and Polycrystalline Thin Films,”, Silicon Processing for the VLSI Era, pp. 161-197.
“Thermal Oxidation of Single Crystal Silicon,” © 1965 IEEE, pp. 198-241.
D.P. Stinton et al., “Advanced Ceramics by Chemical Vapor Deposition Techniques,” Ceramic Bulletin, vol. 67, No. 2, 1988, pp. 350-355.
J.R. Hollahan et al., “Plasma Deposition of Inorganic Thin Films,” Thin Films Processes, Academic Press Inc., © 1978. pp. 335-360.
P.K. Bachman et al., “Plasma-Assisted Chemical Vapor Deposition Processes,” MRS Bulletin, Dec. 1988, pp. 52-59.
M.J. Mayo, “Photodeposition: Enhancement of Deposition Reactions by Heat and Light,” Solid State Technology, Apr. 1986 , pp. 141-144.
C.G. Pantano, “Electron Beam Damage in Auger Electron Spectroscopy,” Application of Surface Science 7, (1981), pp. 115-141.
W.B. Feller et al., “Low Noise Microchannel Plates,” SPIE Conf., Los Angeles, CA, Jan. 15-20, 1989. pp. 1-13.
G.W. Goodrich et al., “Resistance Strip Magnetic Electron Multiplier,” The Review of Scientific Instruments, vol. 32, No. 7, (Jul. 1961), pp. 846-849.
K. Oba, “An Analysis of the Direct Current Operation of Channel Electron
Burle Technologies, Inc.
Dann Dorfman Herrell and Skillman, P.C.
Souw Bernard E
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