Resistive gate field effect transistor

Details Resistive gate field effect transistor Resistive gate field effect transistor

1972-11-01

1976-03-23

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 22, 357 24, 357 53, 357 86, 307304, H01L 2978

Patent

active

039464180

ABSTRACT:
A resistive gate field effect transistor (FET) is disclosed in which the gate comprises a resistive film overlying an insulating layer and in contact with both the source and drain electrodes. This provides an integrated circuit, bidirectional voltage limiter in which the limiting voltage can be tailored to almost any value likely to be found on an integrated circuit. In another form of the present invention, a conductive gate is added between the resistive gate and the substrate.

REFERENCES:
patent: 3192398 (1965-06-01), Benedict
patent: 3708731 (1973-01-01), McDonald
patent: 3728590 (1973-04-01), Kim et al.

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