Patent
1987-10-19
1989-08-01
Tarcza, Thomas H.
357 14, 357 54, H01L 2934, H01L 2992
Patent
active
H00006653
ABSTRACT:
A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.
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Knolle William R.
Osenbach John W.
Bell Telephone Laboratories Incorporated
Koba Wendy W.
Tarcza Thomas H.
Wallace Linda J.
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