Resistive element formed in a semiconductor substrate

Details Resistive element formed in a semiconductor substrate Resistive element formed in a semiconductor substrate

1983-01-05

1984-06-19

Envall, Jr., Roy N.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

338314, 357 51, 357 59, H01C 102

Patent

active

044555474

ABSTRACT:
A resistive element which is formed in a semiconductor substrate comprises a first semiconductor region which is formed in the semiconductor substrate and in which an impurity is diffused at a first concentration; a second semiconductor region which is connected to the first semiconductor region at one end and in which an impurity is diffused at a second concentration higher than the first impurity concentration; a third semiconductor region which is connected to the first semiconductor region at the other end and in which an impurity is diffused at a third concentration higher than the first impurity concentration; and the second and third semiconductor regions respectively including a portion whose cross section has a smaller area than the area of a boundary defined by the second and third semiconductor region with the first semiconductor region.

REFERENCES:
patent: 4124933 (1978-11-01), Nicholas
patent: 4315239 (1982-02-01), Daniele et al.
Lloyd et al., "Polysilicon Resistor Fabrication," IBM Technical Disclosure Bulletin, vol. 23, No. 7A, Dec. 1980, pp. 2811-2812.
"Conduction Properties of Lightly Doped, Polycrystalline Silicon", Solid-State Electronics, vol. 21, pp. 1045-1049 and 1051.

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