Resistive electrode amorphous semiconductor negative resistance

Details Resistive electrode amorphous semiconductor negative resistance Resistive electrode amorphous semiconductor negative resistance

1977-05-31

1980-01-01

Larkins, William D.

357 4, 357 51, 357 67, 357 71, H01L 4500

Patent

active

041819136

ABSTRACT:
Semiconductor devices which exhibit negative differential resistance and comprise a semiconductor material in contact with an electrode and a resistive film layer, preferably comprising an alloy of nickel and chrome is disclosed. The slope of the negative resistance region and the current filament area can be varied by altering the sheet resistivity of the resistive film layer. This allows the semiconductor device to be incorporated in a single monolithic thin film integrated circuit in which the thickness of the semiconductor layer utilized in the integrated circuit is constant. A method for fabricating the aforementioned semiconductor device is also disclosed.

REFERENCES:
patent: 3382418 (1968-05-01), Jensen
patent: 3432729 (1969-03-01), Dyre
patent: 3469154 (1969-09-01), Scholer
patent: 3546491 (1970-12-01), Berglund
patent: 3629863 (1971-12-01), Neale
patent: 3864719 (1975-02-01), Uematsu et al.
patent: 3906537 (1975-09-01), Thornburg et al.
patent: 3975755 (1976-08-01), Thornburg

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