Resistive device and method for its production

Details Resistive device and method for its production Resistive device and method for its production

2007-04-24

2007-04-24

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S358000, C257S359000, C257S360000, C257S363000, C257S379000, C257S380000, C257S381000, C257S516000, C257S537000, C257S538000, C257S539000, C257S540000, C257S541000, C257S542000, C257S543000, C257S577000, C257S904000

Reexamination Certificate

active

10922367

ABSTRACT:
A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current path through the first region is determined by a portion of a doping boundary between the first region and the second region.

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