Resistive composition, resistor using the same, and making...

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as

Reexamination Certificate

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C252S062000, C252S06230C, C252S500000, C252S506000, C252S512000, C338S334000, C338S315000, C420S468000, C420S487000

Reexamination Certificate

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10646805

ABSTRACT:
When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by weight, 0.2 to 1.4 parts germanium by weight, and 85.6 to 95.8 parts copper by weight, and 0 to 10 parts glass powder by weight and 0 to 10 parts copper-oxide powder by weight are mixed relative to the entire amount (100 parts by weight) of these metal components. The obtained resistive paste is then baked, and the resistive composition having the low resistance value and low TCR may be obtained. In addition, a resistor is made by forming the resistive element upon a substrate.

REFERENCES:
patent: 3451808 (1969-06-01), Thielmann
patent: 3847602 (1974-11-01), Blinov et al.
patent: 5198154 (1993-03-01), Yokoyama et al.
patent: 5980785 (1999-11-01), Xi et al.
patent: 6849109 (2005-02-01), Yadav et al.
patent: 8-83969 (1996-03-01), None
patent: 9-213503 (1997-08-01), None
patent: 2002-50501 (2002-02-01), None
patent: 2002-367804 (2002-12-01), None
patent: WO 9603466 (1996-02-01), None

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