1989-11-30
1990-06-26
Wojciechowicz, Edward J.
357 20, 357 48, 357 49, 357 89, H01L 2704
Patent
active
049376489
ABSTRACT:
A bipolar transistor having higher conductivity semiconductor material in the substrate as compared to the active base region to provide charge generation disturbance protection.
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Neils Theodore F.
Shudy Jr. John G.
Udseth William T.
Wojciechowicz Edward J.
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