Resistant transistor

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Details

357 20, 357 48, 357 49, 357 89, H01L 2704

Patent

active

049376489

ABSTRACT:
A bipolar transistor having higher conductivity semiconductor material in the substrate as compared to the active base region to provide charge generation disturbance protection.

REFERENCES:
patent: 4014718 (1977-03-01), Tomozawa et al.
patent: 4109274 (1978-08-01), Belenkov et al.
patent: 4247862 (1981-01-01), Klein
patent: 4252579 (1981-02-01), Ho et al.
patent: 4266238 (1981-05-01), Nishizawa
patent: 4282648 (1981-08-01), Yu et al.
patent: 4424526 (1984-01-01), Dennard et al.
patent: 4450466 (1984-05-01), Nishizawa et al.
patent: 4519128 (1985-05-01), Chesebro et al.

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