Resistance variable memory with temperature tolerant materials

Details Resistance variable memory with temperature tolerant materials Resistance variable memory with temperature tolerant materials

2008-04-29

2008-04-29

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S001000, C257S002000, C257S003000, C257S004000, C257S005000, C257SE29170, C257SE31029

Reexamination Certificate

active

07365411

ABSTRACT:
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.

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